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| APT30GT60BRD 600V 55A Thunderbolt IGBTTM & FRED The Thunderbolt IGBTTM is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBTTM combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. TO-247 * Low Forward Voltage Drop * High Freq. Switching to 150KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter G C E C G E APT30GT60BRD UNIT All Ratings: TC = 25C unless otherwise specified. RY A IN MIN Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 600 600 20 55 30 110 60 200 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 110C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL IM 600 3 1.6 4 2.0 5 2.5 2.8 250 2000 100 A nA Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 052-6251 Rev B DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 APT30GT60BRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10 I C = I C2 MIN TYP MAX UNIT 1600 250 90 140 60 12 14 55 200 140 18 30 300 25 .5 1.2 1.7 mJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time IM EL 3 3 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time PR IN A RY 6 MIN Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 18 30 260 20 1.3 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 3 TJ = +25C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.63 0.90 40 0.22 oz gm C/W Package Weight 6.1 10 lb*in N*m Torque 1 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052-6251 Rev B Repetitive Rating: Pulse width limited by maximum junction temperature. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 APT30GT60BRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT30GT60BRD UNIT 600 Volts 30 70 320 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions A RY MIN RMS Forward Current IN TYP MAX UNIT IF = 30A 1.8 1.5 1.6 250 500 10 A nH Volts IRM LS Maximum Reverse Leakage Current EL Maximum Reverse Leakage Current Series Inductance (Lead to Lead 5mm from Base) DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 30A, diF /dt = -240A/s, VR = 350V (See Figure 10) Characteristic MIN TYP MAX UNIT PR IM VF Maximum Forward Voltage IF = 60A IF = 30A, TJ = 150C VR = VR Rated VR = VR Rated, TJ = 125C Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 350V Forward Recovery Time IF = 30A, diF /dt = 240A/s, VR = 350V Reverse Recovery Current IF = 30A, diF /dt = -240A/s, VR = 350V Recovery Charge IF = 30A, diF /dt = -240A/s, VR = 350V Forward Recovery Voltage IF = 30A, diF /dt = 240A/s, VR = 350V Rate of Fall of Recovery Current TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C 50 50 80 155 155 4 7.5 100 65 ns 10 Amps 15 nC 300 5 Volts 5 A/s 052-6251 Rev B 400 200 APT30GT60BRD 100 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 1600 TJ = 100C VR = 350V IF, FORWARD CURRENT (AMPERES) 80 TJ = 150C TJ = 100C 1200 60A 800 30A 400 15A 60 40 TJ = 25C TJ = -55C 20 0 0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 40 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 350V 0 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 Kf, DYNAMIC PARAMETERS (NORMALIZED) 60A 30 1.6 RY trr IRRM Qrr -50 TJ = 100C VR = 350V IF = 30A Qrr trr 1.2 20 30A 15A IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 200 TJ = 100C VR = 350V IN 0.4 0.0 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature 1200 15.0 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) A 0.8 160 60A 120 30A 1000 800 12.5 10.0 7.5 5.0 2.5 PR Vfr 15A 600 400 200 80 40 tfr 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 1.0 0.5 ZJC, THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE 0.1 0.05 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate NOTE: PDM t1 t2 DUTY FACTOR D = t1 / t2 052-6251 Rev B PEAK TJ =PDM x Z JC + TC 0.001 10-5 10-4 1.0 10 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration APT30GT60BRD Vr D.U.T. 30H trr/Qrr Waveform +15v diF /dt Adjust 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY Figure 25, Diode Reverse Recovery Test Circuit and Waveforms PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6251 Rev B Gate Collector (Cathode) Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
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